- 您现在的位置：买卖IC网 > Sheet目录461 > IXTH12N100L (IXYS)MOSFET N-CH 1000V 12A TO-247
IXTH12N100L
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = 20V, I D = 0.5 ? I DSS , Note 1
3.0
5.0
2500
S
pF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
300
pF
1
2
3
?P
C rss
95
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
R G = 4.7 Ω (External)
30
55
110
65
ns
ns
ns
ns
e
Q g(on)
155
nC
Terminals: 1 - Gate
3 - Source
2 - Drain
Q gs
V GS = 20V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
35
nC
Dim.
Millimeter
Inches
Q gd
R thJC
R thCS
55
0.21
nC
0.31 ° C/W
° C/W
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1
1.65 2.13
b 2
2.87 3.12
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
.016 .031
Safe-Operating-Area Specification
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol
SOA
Test Conditions
V DS = 800V, I D = 0.25A, T C = 60 ° C
Characteristic Values
Min. Typ. Max.
200
W
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Source-Drain Diode
S 6.15 BSC
242 BSC
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Note
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s, V R = 100V, V GS = 0V
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
1000
12
48
1.5
A
A
V
ns
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH12N100
MOSFET N-CH 1000V 12A TO-247
IXTH12N120
MOSFET N-CH 1200V 12A TO-247
IXTH12N90
MOSFET N-CH 900V 12A TO-247
IXTH130N10T
MOSFET N-CH 100V 130A TO-247
IXTH130N15T
MOSFET N-CH 150V 130A TO-247
IXTH130N20T
MOSFET N-CH 200V 130A TO-247
IXTH13N110
MOSFET N-CH 1.1KV 13A TO-247AD
IXTH13N80
MOSFET N-CH 800V 13A TO-247
相关代理商/技术参数
IXTH12N100Q
功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH12N120
功能描述:MOSFET 12 Amps 1200V 1.300 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH12N140
功能描述:MOSFET 1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH12N150
功能描述:MOSFET >1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH12N45
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:12 AMPS, 450-500V, 0.4OM/0.5OM
IXTH12N45A
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247
IXTH12N45MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5)
IXTH12N45MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5)